Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure

ABSTRACT

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometric size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling-down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling-down has also increased the complexity ofprocessing and manufacturing ICs.

Some process steps used in fabricating semiconductors include oxidation,diffusion, doping, annealing, etching and film deposition. Filmdeposition is a reactive process used to produce or deposit thin filmsof material on a semiconductor wafer including, but not limited to,metals, silicon dioxide, tungsten, silicon nitride, silicon oxynitride,and various dielectrics. An unsatisfactory uniformity of the filmdeposited on the semiconductor wafer by film deposition may adverselyaffect the function of the semiconductor devices.

Although existing devices and methods for producing or depositing thinfilms of material on the wafer have been generally adequate for theirintended purposes, they have not been entirely satisfactory in allrespects. Consequently, it would be desirable to provide a solution forforming the thin films for use in a wafer fabricating system.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 shows a schematic diagram of a wafer fabricating system, inaccordance with some embodiments.

FIG. 2 shows a cross-sectional view of a wafer chuck taken along a lineA-A of FIG. 1, in accordance with some embodiments.

FIG. 3 shows a cross-sectional view of a wafer chuck taken along a lineB-B of FIG. 2.

FIG. 4 shows a cross-sectional view of a wafer chuck taken along a lineC-C of FIG. 2.

FIG. 5 shows experimental results of a film thickness uniformity inrelation to different factors, in accordance with some embodiments.

FIG. 6 shows a cross-sectional view of a wafer chuck, in accordance withsome embodiments.

FIG. 7 shows a cross-sectional view of a wafer chuck, in accordance withsome embodiments.

FIG. 8 shows a top view of partial elements of a wafer fabricatingsystem, in accordance with some embodiments.

FIG. 9 shows a flow chart illustrating a method for processing asemiconductor wafer in a wafer fabricating system, in accordance withsome embodiments.

FIG. 10 shows a schematic view of a stage of a method of forming a filmon a semiconductor wafer in which a fluid medium and a gaseous materialare supplied into a wafer chuck, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Semiconductor device fabrication includes many different processes. Onesuch process is performed under an environment with high density plasma(HDP). For example, high-density plasma chemical vapor deposition(HDP-CVD) utilizes high-density plasma directed towards a semiconductorwafer in a reaction chamber to perform film deposition process. To formthe high-density plasma, a gas is supplied through a number of nozzlesand a power source excites gas mixture with RF or microwave power anddirects the plasma ions into a dense region above the semiconductorwafer surface. The main benefit of HDP-CVD is that it can deposit filmsto fill high aspect ratios. However, much of the challenge for the useof high-density plasma is related not only to the controlling of a flowrate of the gas discharged by gas nozzles but also to the controlling ofa wafer temperature. The increased thermal load to the semiconductorwafer may result in a high wafer temperature and cause uneven sputteringrate across the semiconductor wafer. To address this issue, embodimentsof the current disclosure provide a wafer chuck having a fluid guidingstructure to remove heat from the semiconductor wafer and the waferchuck. In one example, the fluid guiding structure routes around acenter of the wafer chuck in a manner that thermal accumulated on theentire area of the wafer chuck can be removed at substantially the sameefficiency, so as to improve uniformity in HDP process.

FIG. 1 shows a schematic diagram of one embodiment of a waferfabricating system 1 for processing a semiconductor wafer 5 by highdensity plasma, in accordance with some embodiments. The processperformed in the wafer fabricating system 1 may include HDP-CVD, PECVD,etching, or sputtering processes. However, the wafer fabricating system1 is not limited to perform above-mentioned processes and may be usedwherever the semiconductor wafer 5 is processed in an elevatedtemperature and used a wafer chuck for cooling down temperature.

The semiconductor wafer 5 may be made of silicon or other semiconductormaterials. Alternatively or additionally, the semiconductor wafer 5 mayinclude other elementary semiconductor materials such as germanium (Ge).In some embodiments, the semiconductor wafer 5 is made of a compoundsemiconductor such as silicon carbide (SiC), gallium arsenic (GaAs),indium arsenide (InAs), or indium phosphide (InP). In some embodiments,the semiconductor wafer 5 is made of an alloy semiconductor such assilicon germanium (SiGe), silicon germanium carbide (SiGeC), galliumarsenic phosphide (GaAsP), or gallium indium phosphide (GaInP). In someembodiments, the semiconductor wafer 5 includes an epitaxial layer. Forexample, the semiconductor wafer 5 has an epitaxial layer overlying abulk semiconductor. In some other embodiments, the semiconductor wafer 5may be a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI)substrate.

The semiconductor wafer 5 may have various device elements. Examples ofdevice elements that are formed in the semiconductor wafer 5 includetransistors (e.g., metal oxide semiconductor field effect transistors(MOSFET), complementary metal oxide semiconductor (CMOS) transistors,bipolar junction transistors (BJT), high-voltage transistors,high-frequency transistors, p-channel and/or n-channel field-effecttransistors (PFETs/NFETs), etc.), diodes, and/or other applicableelements. Various processes are performed to form the device elements,such as deposition, etching, implantation, photolithography, annealing,and/or other suitable processes.

In some embodiments, the wafer fabricating system 1 includes a chamber10, a processing gas delivery module 20, a cleaning gas delivery module30, a wafer holding module 40, a gas source 50, a fluid containing tank60, a radio frequency module 70, a gas exhausting module 80, and acontrol module 90. Additional features can be added to the waferfabricating system 1. Some of the features described below can bereplaced or eliminated for additional embodiments of the waferfabricating system 1.

The chamber 10 is configured to contain one or more semiconductor wafer5 and is configured to perform a process over the semiconductor wafer 5.In some embodiments, the chamber 10 includes a lower housing 11 and anupper lid 12 hinged to the lower housing 11 and rotatable relative tothe lower housing 11. In some embodiments, the upper lid 12 has a domestructure 13 formed therein. An inner wall of the lower housing 11 andthe dome structure 13 respectively define a lower boundary and an upperboundary of an air-tight process region within the chamber 10 forprocessing the semiconductor wafer 5. The lower housing 11 and the domestructure 13 may be made of ceramic dielectric material, such asaluminum oxide or aluminum nitride.

The processing gas delivery module 20 is configured to supply processinggas into the chamber 10. In some embodiments, the processing gasdelivery module 20 supplies processing gas into the chamber 10 via twodifferent paths. For example, the processing gas delivery module 20includes a first gas line 22 and a second gas line 26. The first gasline 22 is connected to a shower head 23 which is centrally arranged atthe dome structure 13. Processing gas from a first source 21 is suppliedinto the chamber 10 via the first gas line 22 and the shower head 23.The second gas line 26 is connected to a gas ring 27 whichcircumferentially extends around a lower edge of the upper lid 12. Anumber of gas nozzles 29 radially extend from the gas ring 27 toward theprocess region within the chamber 10. Processing gas from a secondsource 25 is supplied into the chamber 10 via the second gas line 26,the gas ring 27 and the gas nozzles 29.

As would be understood by a person of skill in the art, while the firstgas line 22 and the second gas line 26 are connected to differentsources, such as first source 21 and second source 25, the actualconnection of gas lines to chamber 10 varies depending on the depositionprocesses executed within chamber 10. The first gas line 22 and thesecond gas line 26 may be connected to the same source, in accordancewith some other embodiments. In some embodiments, at least one of thefirst gas line 22 and the second gas line 26 are connected to two ormore sources, and different types of source gases are mixed beforeinjecting the gases into the chamber 10. The supply of the processinggas from the first source 21 and the first gas line 22 may be regulatedby the control module 90.

The cleaning gas delivery module 30 is configured to supply cleaning gasinto the chamber 10 after a process over the semiconductor wafer 5 iscompleted. In embodiments where flammable, toxic, or corrosive gases areused, it may be desirable to eliminate gas remaining in the chamber 10after processing. In some embodiments, the cleaning gas delivery module30 includes a gas line 32 connected to a gas inlet port 34 formed on atop of the upper lid 12. In some embodiments, as shown in FIG. 1, thegas inlet port 34 is arranged such that an end of the first gas line 22is received therein and the shower head 23 is positioned overlapping adischarging end of the gas inlet port 34 and distant away from thedischarging end of the gas inlet port 34. Cleaning gas from a source 31is supplied into the chamber 10 via the gas line 32, the gas inlet port34 and a gap between the discharging end of the gas inlet port 34 andthe shower head 23. With the arrangement of the shower head 23 at thedischarging end of the gas inlet port 34, the cleaning gas may be evenlydistributed into the chamber 10. The cleaning gas may include molecularfluorine, nitrogen trifluoride, other fluorocarbons or equivalents.

In some embodiments, the cleaning gas delivery module 30 furtherincludes a remote plasma generator 33. The remote plasma generator 33excites the cleaning gas from the source 31 to a plasma and supplies theplasma to the chamber 10 via the gas inlet port 34. The remote plasmagenerator 33 may include a microwave generator. The remote plasmagenerator 33 and the gas inlet port 34 may be made of material that isresistant to attack by the plasma. The remote plasma generator 33 may beplaced close to the gas inlet port 34 to avoid energy loss of theplasma. Generating the plasma in the remote plasma generator 33 allowsthe use of an efficient microwave generator and does not subjectcomponents in the chamber 10 to the temperature, radiation, orbombardment of the glow discharge that may be present in a plasma formedin situ. Consequently, relatively sensitive components, such as waferholding module 40, do not need to be covered with a dummy wafer orotherwise protected, as may be required with an in situ plasma cleaningprocess.

The wafer holding module 40 is configured to hold the semiconductorwafer 5 during the processing. In some embodiments, the wafer holdingmodule 40 includes a base 41, an insulator 42, a wafer chuck 43, and anumber of support pins 45. In some embodiments, the base 41 iselectrically connected to a frequency (RF) power supply 49 and acts asan electrode for regulate plasma in the chamber 10. The insulator 42 isdisposed between the base 41 and the wafer chuck 43 to electricallyisolate the base 41 from the wafer chuck 43. The wafer chuck 43 isconfigured to secure or position the semiconductor wafer 5, for example,by electrostatic force. The wafer chuck 43 may be made from an aluminumoxide or aluminum ceramic material. A thermal diode (not shown infigures) may be mounted on the wafer chuck 43 to monitor wafertemperature by detecting, for example, thermal radiation of the waferchuck 43. The support pins 45 are configured to support thesemiconductor wafer 5 when the semiconductor wafer 5 is loaded orunloaded on the wafer chuck 43 by a robot arm (not shown in figures).The support pins 45 retrack back to the wafer chuck 43 to place thesemiconductor wafer 5 on a top surface of the wafer chuck 43.

FIG. 2 shows a cross-sectional view of the wafer chuck 43 taken along aline A-A of FIG. 1. In some embodiments, the wafer chuck 43 includes anumber of inlet ports or outlet ports for engagement of pipings with thewafer chuck 43 or for facilitating ingress or egress of the fluid to thewafer chuck 43. For example, the wafer chuck 43 includes two gas inletports, such as first gas inlet port 51 and second inlet port 55. Inaddition, the wafer chuck 43 includes a fluid inlet port 61 and a fluidoutlet port 62. In some embodiments, as shown in FIG. 1, the first gasinlet port 51 and the second gas inlet port 55 (only the first gas inletport 51 is illustrated in FIG. 1) are fluidly connected to the gassource 50. Gaseous material 59, such as helium, is supplied to the waferchuck 43 through the first gas inlet port 51 and the second gas inletport 55. Additionally, the fluid inlet port 61 and the fluid outlet port62 are fluidly connected to a fluid containing tank 60. Fluid medium 69,such as glycol, from the fluid containing tank 60 is supplied to a fluidguiding structure 63 formed in the wafer chuck 43 through the fluidinlet port 61 and is circulated back to the fluid containing tank 60through the fluid outlet port 62. The fluid containing tank 60 mayinclude a heat exchanger (not shown in figures) to cool or heat thefluid medium 69. The supply of the gaseous material from the gas source50 and the supply of the fluid medium from the fluid containing tank 60may be regulated by the control module 90.

FIG. 3 shows a cross-sectional view of the wafer chuck 43 taken along aline B-B of FIG. 2, and FIG. 4 shows a cross-sectional view of the waferchuck 43 taken along a line C-C of FIG. 2. In some embodiments, thewafer chuck 43 is placed on the insulator 42. An O-ring 46 is placed inan annular recess 460 formed on a bottom surface 432 of the wafer chuck43. The O-ring 46 is configured to prevent a leakage of fluid or gasfrom the first gas inlet port 51 and the second gas inlet port 55, thefluid inlet port 61 and the fluid outlet port 55. The insulator 42 mayalso include a number of through holes, such as through holes 421-424.The through holes 421-424 are respectively connected to a lower end ofthe first gas inlet port 51, the second gas inlet port 55, the fluidinlet port 61 and the fluid outlet port 55 for allowing an insertion ofthe gas piping or fluid piping (not shown in figures) connected to thefirst gas inlet port 51 and the second gas inlet port 55, the fluidinlet port 61 and the fluid outlet port 55.

Structural features of the wafer chuck 43, in accordance with someembodiments of the present disclosure, are described below.

In some embodiments, as shown in FIG. 2, the two gas inlet ports 51 and55 are located adjacent to a periphery 430 of the wafer chuck 43. Areference line L passes between the two gas inlet ports 51 and 55 andthrough a center C of the wafer chuck 43. The reference line L may beperpendicular to a line connecting the two inlet ports 51 and 55.

In some embodiments, the two gas inlet ports 51 and 55 are fluidlyconnected to grooves formed on a top surface of the wafer chuck 43. Forexample, as shown in FIG. 3, an inner annular groove 435 and an outerannular groove 437 are formed on the top surface 431 of the wafer chuck43. The inner annular groove 435 and the outer annular groove 437 areeach formed in an annular shape and arranged concentrically relative tothe center C of the wafer chuck 43. The outer annular groove 437surrounds the inner annular groove 435 and is located farther away fromthe center C of the wafer chuck 43 than the inner annular groove 435.

The first gas inlet port 51 may be fluidly connected to the innerannular groove 435 through a number of gas channels formed in the waferchuck 43. For example, as shown in FIG. 3, the wafer chuck 43 includes afirst lower channel 52, a first upper channel 53 and a first ring-shapedchannel 54. The first lower channel 52 vertically extends in the waferchuck 43 with a lower end connected to the first gas inlet port 51. Thefirst ring-shaped channel 54 is formed underneath the inner annulargroove 435 and fluidly connected to the inner annular groove 435 througha number of orifices 436 formed on a bottom of the inner annular groove435. The first upper channel 53 extends inclined relative to the firstlower channel 52 and connects the first lower channel 52 to the firstring-shaped channel 54. As such, when a gas piping (not shown infigures) is connected to the first gas inlet port 51, gaseous materialcan be discharged between the semiconductor wafer 5 and the top surface431 of the wafer chuck 43 through the first lower channel 52, the firstupper channel 53, the first ring-shaped channel 54, the orifices 436 andthe inner annular groove 435.

The second gas inlet port 55 may be fluidly connected to the outerannular groove 437 through a number of gas channels formed in the waferchuck 43. For example, as shown in FIG. 4, the wafer chuck 43 includes asecond lower channel 56, a second upper channel 57 and a secondring-shaped channel 58. The second lower channel 56 vertically extendsin the wafer chuck 43 with a lower end connects to the second gas inletport 55. The second ring-shaped channel 58 is formed underneath theouter annular groove 437 and fluidly connected to the outer annulargroove 437 through a number of orifices 438 formed on a bottom of theouter annular groove 437. The second upper channel 57 extends inclinedrelative to the second lower channel 56 and connects the second lowerchannel 56 to the second ring-shaped channel 58. As such, when a gasline (not shown in figures) is connected to the second gas inlet port55, gaseous material can be discharged between the semiconductor wafer 5and the top surface 431 of the wafer chuck 43 through the second lowerchannel 56, the second upper channel 57, the second ring-shaped channel58, the orifices 438 and the outer annular groove 437.

Referring to FIG. 2, in some embodiments, the wafer chuck 43 has a fluidguiding structure 63 formed therein for guiding a flow of fluid mediumin the wafer chuck 43. In some embodiments, the fluid guiding structure63 extends in the same level of the wafer chuck 43 which is distant froma top surface 431 of the wafer chuck 43. The fluid guiding structure 63extends from a first end channel E1 and terminates at a second endchannel E2. The first end channel E1 is fluidly connected to the fluidinlet port 61, and the second end channel E2 is fluidly connected to thefluid outlet port 62. Between the first end channel E1 and the secondend channel E2 are a number of arc-shaped channels, such as firstarc-shaped channel A1, second arc-shaped channel A2, third arc-shapedchannel A3 and fourth arc-shaped channel A4, and a number of connectionchannels, such as first connection channel C1, second connection channelC2 and third connection channel C3. Although FIG. 2 illustrates fourarc-shaped channels and three connection channels, fluid guidingstructure 63 can include any number of arc-shaped channels andconnection channels. In one embodiment, the number of arc-shapedchannels is less than 5.

In some embodiments, an upstream end of the first arc-shaped channel A1is connected to a downstream end of the first end channel E1 and extendsin a circumferential direction of the wafer chuck 43. An arc angle ofthe first arc-shaped channel A1 relative to the center C of the waferchuck 43 is greater than 180 degrees, for example, the arc angle of thefirst arc-shaped channel A1 is in a range from about 330 degrees toabout 355 degrees.

The second arc-shaped channel A2 is located at an inner side (i.e., aside that is closer to the center C of the wafer chuck 43) of the firstarc-shaped channel A1. The second arc-shaped channel A2 extends in thecircumferential direction of the wafer chuck 43. An arc angle of thesecond arc-shaped channel A2 may be less than the arc angle of the firstarc-shaped channel A1. In one exemplary embodiment, the arc angle of thesecond arc-shaped channel A2 relative to the center C of the wafer chuck43 is greater than 180 degrees, for example, the arc angle of the secondarc-shaped channel A2 is in a range from about 300 degrees to about 330degrees.

In some embodiments, as seen from the top view shown in FIG. 2, thesupport pins 45 are located between the first arc-shaped channel A1 andthe second arc-shaped channel A2, arranged such that an interferencebetween support pins 45 and the first arc-shaped channel A1 or thesecond arc-shaped channel A2 will not occur. In addition, as seen fromthe top view shown in FIG. 2, the first gas inlet port 51 and the secondgas inlet port 55 are located between the first arc-shaped channel A1and the second arc-shaped channel A2, arranged such that heat fromregions of the wafer chuck 43 surrounding the first gas inlet port 51and, the second gas inlet port 55 can be efficiently dissipated. Detailsof the process for cooling the wafer chuck will be described in a methodin relation to FIG. 9.

The third arc-shaped channel A3 is located at an inner side of thesecond arc-shaped channel A2. The third arc-shaped channel A3 extends inthe circumferential direction of the wafer chuck 43. An arc angle of thethird arc-shaped channel A3 may be less than the arc angle of the secondarc-shaped channel A2. In one exemplary embodiment, the arc angle of thethird arc-shaped channel A3 relative to the center C of the wafer chuck43 is greater than 180 degrees, for example, the arc angle of the thirdarc-shaped channel A3 is in a range from about 200 degrees to about 230degrees.

The fourth arc-shaped channel A4 is located at an inner side of thethird arc-shaped channel A3. The fourth arc-shaped channel A4 extends inthe circumferential direction of the wafer chuck 43. An arc angle of thefourth arc-shaped channel A4 may be greater than the arc angle of thethird arc-shaped channel A3. In one exemplary embodiment, the arc angleof the fourth arc-shaped channel A4 relative to the center C of thewafer chuck 43 is greater than 180 degrees, for example, the arc angleof the fourth arc-shaped channel A4 is in a range from about 250 degreesto about 300 degrees.

The first connection channel C1 connects a downstream end of the firstarc-shaped channel A1 to an upstream end of the second arc-shapedchannel A2. The second connection channel C2 connects a downstream endof the second arc-shaped channel A2 to an upstream end of the thirdarc-shaped channel A3. The second connection channel C2 may be locatedimmediately adjacent to the fluid inlet port 61. The third connectionchannel C3 connects a downstream end of the third arc-shaped channel A3to an upstream end of the fourth arc-shaped channel A4. The thirdconnection channel C3 may be located immediately adjacent to the fluidoutlet port 62. A downstream end of the fourth arc-shaped channel A4 isconnected to one end of the second end channel E2.

The first connection channel C1, the second connection channel C2 andthe third connection channel C3 may extend in a direction that isparallel to a radial direction of the wafer chuck 43 or inclinedrelative to the radial direction of the wafer chuck 43. In the exemplaryembodiment shown in FIG. 2, the first connection channel C1 extends in adirection that is substantially parallel to the radial direction of thewafer chuck 43. In such embodiment, the first connection channel C1 isperpendicular to the first arc-shaped channel A1 and the secondarc-shaped channel A2.

In addition, the second connection channel C2 extend in a direction thatis inclined relative to the radial direction of the wafer chuck 43.Specifically, the second connection channel C2 forms an acute angle withrespect to the second arc-shaped channel A2, and the second connectionchannel C2 forms an obtuse angle with respect to the third arc-shapedchannel A3. As such, the fluid medium may have a slower flow rate whilepassing through an intersection point of the second arc-shaped channelA2 and the second connection channel C2 than that of the fluid mediumpassing through other channels. Moreover, the fluid medium may have afaster flow rate while passing through an intersection point of thethird arc-shaped channel A3 and the second connection channel C2 thanthat of the fluid medium passing through other channels. The thirdconnection channel C3 may extends in the radial direction of the waferchuck 43.

In some embodiments, for a delivery of a coolant to chill down the waferchuck 43, the coolant in the fluid inlet port 61 may have a temperaturelower than the coolant in the fluid outlet port 62. With differentintersection angles of the connection channels, the fluid medium in thesecond connection channel C2 may be chilled down by a lower temperaturegenerated by the fluid inlet port 61, and the fluid medium in the thirdconnection channel C3 may not be heated up by a higher temperaturegenerated by the fluid outlet port 62.

In some embodiments, as shown in FIG. 2, as seen from a top view, afan-shaped sector 434 is defined on the wafer chuck 43. The fan-shapedsector 434 is a circle sector enclosed by a first boundary line B1, asecond boundary line B2 and an arc located at the periphery 430 of thewafer chuck 43. The central angle α1 of the fan-shaped sector 434 isfrom about 270 degrees to about 300 degrees. The first gas inlet port 51and the second gas inlet port 55 are located underneath the fan-shapedsector 434 of the wafer chuck 43, and the reference line L passingbetween the first gas inlet ports 51 and 55 forms included angles α2 andα3 with the first boundary line B2 and second boundary line B1. Theangle α2 is equal to the angle α3. In one exemplary embodiment, theangles α2 and α3 are in a range from about 120 degrees to about 150degrees.

In some embodiments, all of the channels of the fluid guiding structure63 located underneath of the fan-shaped sector 434 of the wafer chuck 43are formed with an arc shape and is a portion of a circle. For example,segments of each of the first arc-shaped channel A1, the secondarc-shaped channel A2, the third arc-shaped channel A3 and the fourtharc-shaped channel A4 located underneath of the fan-shaped sector 434are parts of circles with different radii.

In some embodiments, all of the channels of the fluid guiding structure63 located underneath of the fan-shaped sector 434 of the wafer chuck 43are concentrically arranged relative to the center C of the wafer chuck43. For example, segments of each of the first arc-shaped channel A1,the second arc-shaped channel A2, the third arc-shaped channel A3 andthe fourth arc-shaped channel A4 located underneath of the fan-shapedsector 434 are concentrically arranged relative to the center C of thewafer chuck 43.

In some embodiments, all of the channels of the fluid guiding structure63 located underneath of the fan-shaped sector 434 of the wafer chuck 43are symmetrically arranged relative to the reference line L passingbetween the first gas inlet ports 51 and 55. For example, segments ofeach of the first arc-shaped channel A1, the second arc-shaped channelA2, the third arc-shaped channel A3 and the fourth arc-shaped channel A4located underneath of the fan-shaped sector 434 are symmetricallyarranged relative to the reference line L passing between the first gasinlet ports 51 and 55. In other words, segments of each of the firstarc-shaped channel A1, the second arc-shaped channel A2, the thirdarc-shaped channel A3 and the fourth arc-shaped channel A4 that arelocated at two sides of the reference line L have the same arc lengthfrom the reference line L to either one of the first boundary line B1 orthe second boundary line B2.

In some embodiments, all of the channels not extending in thecircumferential direction of the wafer chuck 43 are located outside thefan-shaped sector 434. For example, the first connection channel C1, thesecond connection channel C2, the third connection channel C3, the firstend channel E1 and the second end channel E2 are not located underneathof the fan-shaped sector 434. In addition, the fluid inlet port 61 andthe fluid outlet port 62 are located outside the fan-shaped sector 434.

In some embodiments, the first arc-shaped channel A1, the secondarc-shaped channel A2, the third arc-shaped channel A3 and the fourtharc-shaped channel A4 are spaced apart from each other by differentpitches. For example, as shown in FIG. 3, the first arc-shaped channelA1 is spaced apart from the second arc-shaped channel A2 by a firstpitch P1, the second arc-shaped channel A2 is spaced apart from thethird arc-shaped channel A3 by a second pitch P2, and the thirdarc-shaped channel A3 is spaced apart from the fourth arc-shaped channelA4 by a third pitch P3. The first pitch P1 is greater than the secondpitch P2, and the second pitch P2 is greater than the third pitch P3. Inone exemplary embodiment, the first pitch P1 is in a range from about 38mm to about 45 mm, for example, the first pitch P1 is 42.14 mm. In oneexemplary embodiment, the second pitch P2 is in a range from about 28 mmto about 35 mm, for example, the second pitch P2 is 28.84 mm. In oneexemplary embodiment, the third pitch P3 is in a range from about 20 mmto about 25 mm, for example, the third pitch P3 is 23.86 mm.

In some embodiments, the outermost channel of the fluid guidingstructure 63 is spaced apart from the periphery 430 of the wafer chuck43 by a distance greater than 0. For example, as shown in FIG. 3, thefirst arc-shaped channel A1 is distant away from the periphery 430 ofthe wafer chuck 43 by a distance P0. The distance P0 is in a range fromabout 10 mm to about 15 mm, for example 12 mm. By arranging the firstarc-shape channel A1 spaced apart from the periphery 430 of the waferchuck 43, the temperature uniformity in the peripheral region of thewafer chuck 43 is improved. In some embodiments, as shown in FIG. 3, thefirst arc-shaped channel A1 is located underneath a vertical projectionof the inner annular groove 435. As seen from the top view shown in FIG.3, the outer annular groove 437 is closer to the periphery 430 of thewafer chuck 43 than the first arc-shaped channel A1.

In some embodiments, each of the first connection channel C1, the secondconnection channel C2, and the third connection channel C3 has a lengththat is substantially the same as the pitch between the arc-shapedchannels that are connected at their two ends. For example, the firstconnection channel C1 has a length that is equal to the first pitch P1,the second connection channel C2 has a length that is equal to thesecond pitch P2, and the third connection channel C3 has a length thatis equal to the third pitch P3. In other words, the length of the firstconnection channel C1 is greater than the length of the secondconnection channel C2, and the length of the second connection channelC2 is greater than the length of the third connection channel C3.

In some embodiments, since the semiconductor wafer 5 at the centralregion has a higher temperature than that of the peripheral region ofthe semiconductor wafer 5, due to the configuration of graduallyincreasing pitch in a direction away from the center C of the waferchuck 43, a higher heat exchange rate is exhibited at the region nearbythe center C of the wafer chuck 43 as compared to the exchange rate atthe region adjacent to the periphery 430 of the wafer chuck 43.

In some embodiments, the fluid inlet port 61 has a width W1 (see FIG.3). In one embodiment, the width W1 is in a range from about 25 mm toabout 30 mm, for example, the width W1 is of about 28 mm. The fluidoutlet port 62 may have the same width as the fluid inlet port 61. Insome embodiments, the fluid guiding structure 63 has a uniform dimensionfor every channel and has a width (or diameter) that is greater than adepth. For example, as shown in FIG. 3, the second end channel E2 has adepth D in a range from about 8 mm to about 12 mm, for example, thedepth D is about 8 mm; and the second end channel E2 has a width (ordiameter) W2 in a range from about 8 mm to about 12 mm, for example, thewidth W2 is about 12 mm.

According to an experimental result, as shown in FIG. 5, with a channelhaving a depth D of about 8 mm and a width W2 of about 12 mm, thesmallest film thickness uniformity is exhibited. The film thicknessuniformity satisfies the following equation:

(T _(Max) −T _(Min))/2*T _(avg)*100%

Where T_(Max) is a maximum thickness measured on the wafer surface,T_(Min) is a minimum thickness measured on the wafer surface, andT_(avg) is an average thickness measured on the wafer surface. Lowerfilm thickness uniformity may demonstrate a better performance ofsemiconductor devices.

FIG. 6 shows a cross-sectional view of a wafer holding module 40 a, inaccordance with some embodiments. The wafer holding module 40 a issimilar to the wafer holding module 40 shown in FIG. 2 and likecomponents have like reference numbers. Differences between the waferholding module 40 a and the wafer holding module 40 includes the waferholding module 40 a replacing the two gas inlet ports 51 and 55 with twogas inlet ports 51 a and 55 a.

In some embodiments, the gas inlet port 51 a and the gas inlet port 55 aare located adjacent to a periphery 430 a of the wafer chuck 43 a. Areference line L passes between the two gas inlet ports 51 a and 55 aand through the center C of the wafer chuck 43. The reference line L maybe perpendicular to a line connecting the two inlet ports 51 a and 55 a.In some embodiments, the two gas inlet ports 51 a and 55 a are fluidlyconnected to grooves, such as inner annular groove 435 and outer annulargroove 437 shown in FIG. 3, formed on a top surface of the wafer chuck43. The gas inlet ports 51 a and 55 a are located underneath thefan-shaped sector 434 a of the wafer chuck 43 a, and the reference lineL passing between the gas inlet ports 51 a and 55 a forms includedangles α5 and α6 with the first boundary line B1 and second boundaryline B2. The angle α5 is different from the angle α6. In one exemplaryembodiment, the angles α5 is in a range from about 120 degrees to about150 degrees, and the angle α6 is in a range from about 30 degrees toabout 60 degrees.

In the embodiment shown in FIG. 6, segments of each of the firstarc-shaped channel A1, the second arc-shaped channel A2, the thirdarc-shaped channel A3 and the fourth arc-shaped channel A4 locatedunderneath of the fan-shaped sector 434 a are asymmetrically arrangedrelative to the reference line L passing between the gas inlet ports 51a and 55 a. In other words, segments of each of the first arc-shapedchannel A1, the second arc-shaped channel A2, the third arc-shapedchannel A3 and the fourth arc-shaped channel A4 that are located at twosides of the reference line L have different arc lengths from thereference line L to the first boundary line B1 or from the referenceline L to the second boundary line B2.

FIG. 7 shows a cross-sectional view of a wafer holding module 40 b, inaccordance with some embodiments. The wafer holding module 40 b issimilar to the wafer holding module 40 shown in FIG. 2 and likecomponents have like reference numbers. Differences between the waferholding module 40 b and the wafer holding module 40 includes the waferholding module 40 b replacing the fluid guiding structure 63 with fluidguiding structure 63 b and replacing the fluid inlet port 61 and thefluid outlet port 62 with a fluid inlet port 61 b and a fluid outletport 62 b.

The fluid inlet port 61 b is located adjacent to a periphery 430 b ofthe wafer chuck 43 b, and the fluid outlet port 62 b is located at acenter C of the wafer chuck 43 b. In some embodiments, the fluid guidingstructure 63 b is formed with a spiral shape and includes a number ofarc-shape channels, such as first arc-shaped channel Alb, secondarc-shaped channel A2 b, third arc-shaped channel A3 b, fourtharc-shaped channel A4 b and fifth arc-shaped channel A5 b. An upstreamend of the first arc-shaped channel Alb is connected to the fluid inletport 61 b and a downstream end of the fifth arc-shaped channel A5 b isconnected to the fluid outlet port 62 b. The second arc-shaped channelA2 b, the third arc-shaped channel A3 b, the fourth arc-shaped channelA4 b consecutively extend from the first arc-shaped channel Alb to thefifth arc-shaped channel A5 b.

In some embodiments, each of the first arc-shaped channel Alb, thesecond arc-shaped channel A2 b, the third arc-shaped channel A3 b, thefourth arc-shaped channel A4 b, and the fifth arc-shaped channel A5 bhas a central angle of about 360 degrees. In addition, segments of eachof the first arc-shaped channel Alb, the second arc-shaped channel A2 b,the third arc-shaped channel A3 b, the fourth arc-shaped channel A4 b,and the fifth arc-shaped channel A5 b located underneath of thefan-shaped sector 434 b of the wafer chuck 43 b are formed with arcshape. Moreover, segments of each of the first arc-shaped channel Alb,the second arc-shaped channel A2 b, the third arc-shaped channel A3 b,the fourth arc-shaped channel A4 b, and the fifth arc-shaped channel A5b located underneath of the fan-shaped sector 434 b of the wafer chuck43 are asymmetrically arranged relative to the reference line L passingbetween gas inlet ports 51 b and 55 b. The gas inlet ports 51 b and 55 bmay have similar configuration as the first gas inlet port 51 and 55.

FIG. 8 shows a top view of partial elements of a wafer fabricatingsystem, in accordance with some embodiments. In some embodiments, thesecond gas line 26 includes an end segment concentrically arranged withthe gas ring 27 relative to the center C of the wafer chuck 43, and thesecond gas line 26 is connected to the gas ring 27 through a tube 28.The end segment of the second gas line 26 has a width D1 and the gasring 27 has a width D2. In some embodiments, the width D1 is differentfrom the width D2. For example, the width D1 is of about 10 mm and thewidth D2 is of about 12 mm, which significantly improves velocityuniformity of the processing gas supplied from the gas nozzles 29.

In some embodiments, as shown in FIG. 8, an extension line EL of thetube 28 passes through the center C of the wafer chuck 43. An includedangle α7 of the extension line EL and the reference line L between thefirst gas inlet port 51 and 55 is of about 30 degrees to about 50degrees. In some embodiments, the gas nozzles 29 located closer to thetube 28 supply processing gas at a higher velocity as compared to othergas nozzles 29 away from the tube 28. Difference in the velocity of theprocessing gas may lead to an uneven thickness uniformity. However,since an upstream segment A1U of the first arc-shape channel A1, whichconveys cooling medium just entering the fluid guiding structure 63, islocated adjacent to the tube 28, a region of the semiconductor wafer 5located above the upstream segment AIU of the first arc-shaped channelA1 may have a temperature slightly lower than temperature in otherregions. As a result, a film growing rate is optimally regulated andfilm thickness uniformity is improved.

Referring to FIG. 1, in some embodiments, the radio frequency module 70is configured to generate RF fields so as to excite plasma in thechamber 10. In some embodiments, the radio frequency module 70 includesa source radio frequency 71, a top electrode 72 and a number ofinductive coils 73. The source radio frequency 71 may be connected tothe control module 90. The control module 90 is operable to modulate thepower output of the source radio frequency 71 and to deliver the rightamount of power to the top electrode 72 and the inductive coils 73 forplasma generation. The wafer chuck 43 is also RF-biased by an RF powersupply 49. The RF power supply 49 may be connected to the control module90. The control module 90 is operable to modulate the power output ofthe RF power supply 49 and to deliver the appropriate amount of power tothe wafer chuck 43.

The gas exhausting module 80 is configured to remove the gaseousmaterials or plasma in the chamber 10. In some embodiments, the gasexhausting module 80 includes an exhaust conduit 81 and a pump 82. Theexhaust conduit 81 is connected to the lower portion of the chamber 10.The exhaust conduit 81 may be made of quartz, SiC, Si or any othersuitable material commonly used in the art. The pump 82 is connected tothe exhaust conduit 81 and configured to create the exhaust flow fromthe chamber 10. The flow rate of the exhaust flow in the exhaust conduit81 may be adjusted by controlling the output power of the pump 82according to a control signal issued from the control module 90. Thepump 82 may include, but is not limited to, a turbo-molecular pump.

The control module 90 controls and directs the fabrication tools, suchas the chamber 10, the processing gas delivery module 20, the cleaninggas delivery module 30, the radio frequency module 70, and the gasexhausting module 80 to start and stop various processes involved in thefilm deposition process. The control module 90 also controls the supplyof the gaseous material from the gas source 50 and the supply of thefluid medium from the fluid containing tank 60.

In some embodiments, the control module 90 includes a processor 91 and amemory 92. The processor 91 is arranged to execute and/or interpret oneor more set of instructions stored in the memory 92. In someembodiments, the processor 91 is a central processing unit (CPU), amulti-processor, a distributed processing system, an applicationspecific integrated circuit (ASIC), and/or a suitable processing unit.The memory 92 includes a random access memory or other dynamic storagedevice for storing data and/or instructions for execution by theprocessor 91. In some embodiments, the memory 92 is used for storingtemporary variables or other intermediate information during executionof instructions to be executed by the processor 91. In some embodiments,the memory 92 also includes a read-only memory or other static storagedevice for storing static information and instructions for the processor91. In some embodiments, the memory 92 is an electronic, magnetic,optical, electromagnetic, infrared, and/or a semiconductor system (orapparatus or device). For example, the memory 92 includes asemiconductor or solid-state memory, a magnetic tape, a removablecomputer diskette, a random access memory (RAM), a read-only memory(ROM), a rigid magnetic disk, and/or an optical disk. In someembodiments using optical disks, the memory 92 includes a compactdisk-read only memory (CD-ROM), a compact disk-read/write (CD-R/W),and/or a digital video disc (DVD).

FIG. 9 is a flow chart illustrating a method S100 for processingsemiconductor wafers 5, in accordance with some embodiments. Forillustration, the flow chart will be described along with the drawingsshown in FIGS. 1-8 and 10. Additional operations can be provided before,during, and after the method S100, and some of the operations describedcan be replaced or eliminated for other embodiments of the method.

The method S100 begins with operation S110, in which the semiconductorwafer 5 is loaded on the top surface 431 of the wafer chuck 43. In someembodiments, the semiconductor wafer 5 is moved into the chamber 10 by arobot arm (not shown in figures). The robot arm places the semiconductorwafer 5 on the support pins 45 and moves outside of the chamber 200.After the semiconductor wafer 5 is placed on the support pins 45, thesupport pins 45 lower the semiconductor wafer 5, and then thesemiconductor wafer 5 is fixed by the wafer chuck 43, as shown in FIG.10.

The method S100 also includes operation S120, in which a gaseousmaterial is supplied between the semiconductor wafer 5 and the topsurface 431 of the wafer chuck 43. In some embodiments, the gaseousmaterial is supplied to the wafer chuck 43 via one or more gas pipingsthat are connected to the first gas inlet port 51 and the second gasinlet port 55. The gaseous material 59 from the first gas inlet port 51may be delivered to the inner annular groove 435 through gas channels,such as first lower channel 52, first upper channel 53, firstring-shaped channel 54 and orifices 436, shown in FIG. 3. In addition,the gaseous material 59 from the second gas inlet port 55 may besupplied into the outer annular groove 437 through gas channels, such assecond lower channel 56, second upper channel 57, second ring-shapedchannel 58 and orifices 438, shown in FIG. 4.

As shown in FIG. 10, the gaseous material 59 filled in the inner annulargroove 435 and the outer annular groove 437 will continue flowing into agap formed between the semiconductor wafer 5 and the top surface 431 ofthe wafer chuck 43. Most of the gaseous material 59 from the innerannular groove 435 is trapped between the semiconductor wafer 5 and thetop surface 431 of the wafer chuck 43 by the gaseous material 59 fromthe outer annular groove 437. Therefore, a gas film is formed betweenthe semiconductor wafer 5 and top surface 431 of the wafer chuck 43 andacts as a heat-transfer medium between the semiconductor wafer 5 and thewafer chuck 43. In some embodiments, the gaseous material 59 include agas having a relative high thermal conductivity, such as helium.

The method S100 also includes operation S130, in which a fluid medium issupplied to the fluid guiding structure 63 of the wafer chuck 43. Insome embodiments, a fluid medium 69, such as glycol, is delivered to thefluid guiding structure 63 for cooling the wafer chuck 43. In someembodiments, the fluid medium 69 is supplied into the fluid guidingstructure 63 at a flow rate in a range from about 0.5 m/s to about 2.0m/s. According to an experimental result, as shown in FIG. 5, in thecondition that the fluid medium 69 is controlled to have a flow rate ofabout 2.0 m/s, the smallest film thickness uniformity is exhibited.

In some embodiments, the fluid medium 69 is supplied into the fluidguiding structure 63 via a piping connected to the fluid inlet port 61.After the fluid medium 69 enters the fluid guiding structure 63, thefluid medium 69 may sequentially flow through the first end channel E1,the first arc-shaped channel A1, the first connection channel C1, thesecond arc-shaped channel A2, the second connection channel C2, thethird arc-shaped channel A3, the third connection channel C3, theconnection channel C3 and the second end channel E2. The fluid medium 69is then removed from the fluid guiding structure 63 via another pipingconnected to the fluid outlet port 62.

In some embodiments, the fluid medium 69 is guided by two arc-shapedchannels which are located at two sides of the first gas inlet port 51and the second gas inlet port 55, and the fluid medium 69 flows throughthe two arc-shaped channels in opposite circumferential directionsaround the center C of the wafer chuck 43. For example, as shown in FIG.10, the fluid medium 69 in the first arc-shaped channel A1 flows in acounter-clockwise direction (designated as “X”) relative to the center Cof the wafer chuck 43, and the fluid medium 69 in the second arc-shapedchannel A2 flows in a clockwise direction (designated as “●”) relativeto the center C of the wafer chuck 43. The fluid medium 69 flows throughthe first arc-shaped channel A1 and the second arc-shaped channel A2 inopposite circumferential directions around the center C of the waferchuck 43. With such arrangement, the heat in the fan-shaped sector 434of the wafer chuck 43 can be removed efficiently. In addition, the fluidmedium 69 in the third arc-shaped channel A3 flows in a clockwisedirection (designated as “X”) relative to the center C of the waferchuck 43, and the fluid medium 69 in the fourth arc-shaped channel A4flows in a counter-clockwise direction (designated as “●”) relative tothe center C of the wafer chuck 43. The fluid medium 69 flows throughthe third arc-shaped channel A3 and the fourth arc-shaped channel A4 inopposite circumferential directions around the center C of the waferchuck 43.

In some embodiments, the fluid medium 69 is guided by the arc-shapedchannels that are symmetrical about the reference line L passing betweenthe first gas inlet port 51 and the second gas inlet port 55. Forexample, the fluid medium 69 is guided by the first arc-shaped channelA1, the second arc-shaped channel A2, the third arc-shaped channel A3and the fourth arc-shaped channel A4 which are symmetrical about thereference line L passing through between the first gas inlet port 51 andthe second gas inlet port 55, as shown in FIG. 2. However, it will beappreciated that many variations and modifications can be made toembodiments of the disclosure. In some embodiments, the fluid medium 69is guided by the arc-shaped channels that are asymmetrical about areference line L passing between the first gas inlet port 51 and thesecond gas inlet port 55. For example, the fluid medium 69 is guided bythe first arc-shaped channel A1, the second arc-shaped channel A2, thethird arc-shaped channel A3 and the fourth arc-shaped channel A4 whichare asymmetrical about the reference line L passing between the firstgas inlet port 51 a and the second gas inlet port 55 a, as shown in FIG.5. By arranging two arc-shape channels passing through two oppositesides of the gas inlet ports, heat from a portion of the wafer chuck 43that is located around the gas inlet ports can be evenly dissipated byboth two neighboring arc-shaped channels.

In some embodiments, the fluid medium 69 is guided by the arc-shapedchannels that are concentrically arranged relative to the center C ofthe wafer chuck 43. For example, the fluid medium 69 is guided by thefirst arc-shaped channel A1, the second arc-shaped channel A2, the thirdarc-shaped channel A3 and the fourth arc-shaped channel A4 which areconcentrically arranged relative to the center C of the wafer chuck 43,as shown in FIG. 2. Since the arc-shaped channels are concentricallyarranged, heat from a portion of the wafer chuck 43 that is locatedbetween two arc-shaped channels can be evenly dissipated by bothneighboring arc-shaped channels. As a result, a uniform temperaturedistribution is exhibited on the semiconductor wafer 5.

In some embodiments, the fluid medium 69 is guided by the arc-shapedchannels that are concentrically arranged relative to the center C ofthe wafer chuck 43. For example, the fluid medium 69 is guided by thefirst arc-shaped channel A1, the second arc-shaped channel A2, the thirdarc-shaped channel A3 and the fourth arc-shaped channel A4, as shown inFIG. 2. The arc angle of the first arc-shaped channel A1 is in a rangefrom about 330 degrees to about 355 degrees, the arc angle of the secondarc-shaped channel A2 is in a range from about 300 degrees to about 330degrees, the arc angle of the third arc-shaped channel A3 is in a rangefrom about 200 degrees to about 230 degrees, and the arc angle of thefourth arc-shaped channel A4 is in a range from about 250 degrees toabout 300 degrees. Since the arc-shaped channels extend through most ofthe area of the wafer chuck 43, the temperature in the wafer chuck 43can be accurately regulated.

In some embodiments, the fluid medium 69 is guided by one of thearc-shaped channels that is located underneath a vertical projection ofthe inner annular groove 435. For example, as shown in FIG. 10, thefluid medium 69 is guided by the first arc-shape channel A1, and thefirst arc-shape channel A1 is located underneath a vertical projectionof the inner annular groove 435.

In some embodiments, the fluid medium 69 from the fluid inlet port 61first flows through an arc-shaped channel that is farthest away from thecenter C of the wafer chuck 43 and flows to another arc-shaped channelthat is located closer to the center C of the wafer chuck 43. Forexample, the fluid medium 69 from the fluid inlet port 61 flows throughthe first arc-shaped channel A1 prior to the second arc-shaped channelA2.

The method S100 also includes operation S140, in which a plasma gas issupplied over the semiconductor wafer 5. In some embodiments, the RFpower is applied to the dome structure 13 and the wafer chuck 43 by theradio frequency module 70 and the RF power supply 49, and the plasma isexcited between the dome structure 13 and the wafer chuck 43. In someembodiments, as shown in FIG. 10, the plasma gas 15 is direct toward thesemiconductor wafer 5 so as to form a thin film on the semiconductorwafer 5 in a HDP-CVD process, or recess a material formed on thesemiconductor wafer 5 in an etching process.

The method S100 also includes operation S150, in which the semiconductorwafer 5 is unloaded from the wafer chuck 43. In some embodiments, afterthe completion of the process in the chamber 10, the semiconductor wafer5 is lifted by the support pins 45, and is removed from the chamber 10through the robot arm (not shown in figures).

It is understood that the semiconductor wafer fabricated according tothe present disclosed methods undergoes further processes. For example,after the semiconductor wafer 5 formed with a thin film is removed fromthe wafer fabricating system 1, the semiconductor wafer 5 is sent to achemical-mechanical polishing (CMP) system for a planarization process.It will be appreciated that since the thin films formed on thesemiconductor wafer 5 have a higher uniformity as compared with thosehandled by a conventional wafer chuck, process parameters utilized inthe planarization process can be set according to a regular recipewithout spending additional time for reworking. As a result, a toolavailability of CMP system is increased, and the usage of a slurry inthe CMP system is reduced.

The semiconductor wafer 5 may undergo additional processes includingmaterial deposition, implantation, or etching operations, to formvarious features such as field effect transistors, cap insulatinglayers, contacts/vias, silicide layers, interconnect metal layers,dielectric layers, passivation layers, metallization layers with signallines, or the like. In some embodiments, one or more layers ofconductive, semiconductive, and insulating materials are formed over thesubstrate, and a pattern is formed in one or more of the layers.

Embodiments of a wafer fabricating system use a wafer chuck to cool thesemiconductor wafer. The fluid guiding structure for guiding a heatexchanging medium in the wafer chuck includes a number of arc-shapedchannels arranged next to gas inlet ports for receiving helium gas.Since heat accumulated at regions of the wafer chuck around the gasinlet ports can be efficiently removed, a more uniform processing islikely to occur on the semiconductor wafer being processed. According toone experimental result in HDP-CVD process, the film thicknessuniformity decreases about 0.8% from 1.57% to 0.78% as compare tosemiconductor wafer cooled by a conventional wafer chuck.

In accordance with some embodiments, a method for processingsemiconductor wafer is provided. The method includes loading asemiconductor wafer on a top surface of a wafer chuck. The method alsoincludes supplying a gaseous material between the semiconductor waferand the top surface of the wafer chuck through a first gas inlet portand a second gas inlet port located underneath a fan-shaped sector ofthe top surface. The method further includes supplying a fluid medium toa fluid inlet port of the wafer chuck and guiding the fluid medium fromthe fluid inlet port to flow through a number of arc-shaped channelslocated underneath the fan-shaped sector of the top surface. Inaddition, the method includes supplying a plasma gas over thesemiconductor wafer.

In accordance with some embodiments, a method for processingsemiconductor wafer is provided. The method includes loading asemiconductor wafer on a top surface of a wafer chuck. The method alsoincludes supplying a gaseous material between the semiconductor waferand the top surface of the wafer chuck through a gas inlet port of thewafer chuck. The method further includes supplying a fluid medium to afluid inlet port of the wafer chuck and guiding the fluid medium fromthe fluid inlet port to flow through a first arc-shaped channel and asecond arc-shaped channel which are located at opposite sides of the gasinlet port. The second arc-shaped channel is located closer to a centerof the wafer chuck than the first arc-shaped channel, and the fluidmedium from the fluid inlet port flows through the first arc-shapedchannel prior to the second arc-shaped channel. In addition, the methodincludes supplying a plasma gas over the semiconductor wafer.

In accordance with some embodiments, a wafer fabricating system forprocessing semiconductor wafer is provided. The wafer fabricating systemincludes a wafer chuck having a top surface. A number of orifices areformed on the top surface. The wafer fabricating system also includes agas inlet port formed in the wafer chuck and located underneath afan-shaped sector of the top surface. The gas inlet port is fluidlycommunicated with the orifices. The wafer fabricating system furtherincludes a fluid inlet port, a first arc-shaped channel and a secondarc-shaped channel formed in the wafer chuck. The first arc-shapedchannel and a second arc-shaped channel fluidly communicated with thefluid inlet port. The first arc-shaped channel and the second arc-shapedchannel are located underneath a fan-shaped sector of the top surfaceand located at opposite sides of the gas inlet port. In addition, thewafer fabricating system includes a gas source and fluid containingsource. The gas source is fluidly connected to the gas inlet port andthe fluid containing source is fluidly connected to the fluid inletport.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for processing a semiconductor wafer,comprising: loading a semiconductor wafer on a top surface of a waferchuck; supplying a gaseous material between the semiconductor wafer andthe top surface of the wafer chuck through a first gas inlet port and asecond gas inlet port located underneath a fan-shaped sector of the topsurface; supplying a fluid medium to a fluid inlet port of the waferchuck and guiding the fluid medium from the fluid inlet port to flowthrough a plurality of arc-shaped channels located underneath thefan-shaped sector of the top surface; and supplying a plasma gas overthe semiconductor wafer.
 2. The method as claimed in claim 1, whereinthe fluid medium is guided by the arc-shaped channels that aresymmetrical about a reference line passing between the first gas inletport and the second gas inlet port.
 3. The method as claimed in claim 1,wherein the fluid medium is guided by the arc-shaped channels that areasymmetrical about a reference line passing between the first gas inletport and the second gas inlet port; wherein an included angle betweenthe reference line and a boundary of the fan-shaped sector is greaterthan 30 degrees, as seen from a top view.
 4. The method as claimed inclaim 1, wherein the fluid medium is guided by the arc-shaped channelsthat are concentrically arranged relative to a center of the waferchuck.
 5. The method as claimed in claim 1, wherein the fluid medium isguided by the arc-shaped channels which have arc angles greater than 180degrees relative to a center of the wafer chuck.
 6. The method asclaimed in claim 1, wherein a first of the arc-shaped channels, a secondof the arc-shaped channels and a third of the arc-shaped channels arearranged in order along a direction toward a center of the wafer chuck,and the method further comprises: guiding the fluid medium from thefirst of the arc-shaped channels to the second of the arc-shapedchannels through a first connection channel; and guiding the fluidmedium from the second of the arc-shaped channels to the third of thearc-shaped channels through a second connection channel which has alength less than a length of the first connection channel.
 7. The methodas claimed in claim 1, wherein the fluid medium is guided by a first ofthe arc-shaped channels and a second of the arc-shaped channels whichare located at two sides of the first and second gas inlet ports,wherein the fluid medium flows through the first of the arc-shapedchannels and the second of the arc-shaped channels in oppositecircumferential directions around a center of the wafer chuck.
 8. Themethod as claimed in claim 1, wherein the gaseous material suppliedthrough the first gas inlet port is guided to an inner annular grooveformed on the top surface of the wafer chuck; wherein the gaseousmaterial supplied through the second gas inlet port is guided to anouter annular groove formed on the top surface of the wafer chuck whichsurrounds the inner annular groove.
 9. The method as claimed in claim 8,wherein the fluid medium is guided by one of the arc-shaped channelsthat is located underneath a vertical projection of the inner annulargroove.
 10. The method as claimed in claim 1, further comprisingdischarging the fluid medium through a fluid outlet port, wherein thefluid inlet port and the fluid outlet port are located outside thefan-shaped sector of the wafer chuck.
 11. A method for processing asemiconductor wafer, comprising: loading a semiconductor wafer on a topsurface of a wafer chuck; supplying a gaseous material between thesemiconductor wafer and the top surface of the wafer chuck through a gasinlet port of the wafer chuck; supplying a fluid medium to a fluid inletport of the wafer chuck and guiding the fluid medium from the fluidinlet port to flow through a first arc-shaped channel and a secondarc-shaped channel which are located at opposite sides of the gas inletport, the second arc-shaped channel located closer to a center of thewafer chuck than the first arc-shaped channel, wherein the fluid mediumfrom the fluid inlet port flows through the first arc-shaped channelprior to the second arc-shaped channel; and supplying a plasma gas overthe semiconductor wafer.
 12. The method as claimed in claim 11, whereinthe fluid medium is guided by the first arc-shaped channel and thesecond arc-shaped channel that are concentrically arranged relative tothe center of the wafer chuck.
 13. The method as claimed in claim 11,wherein the fluid medium is guided by the first arc-shaped channel andthe second arc-shaped channel which have arc angles greater than 180degrees relative to the center of the wafer chuck.
 14. The method asclaimed in claim 11, further comprising: guiding the fluid medium fromthe second arc-shaped channel passes through a third arc-shaped channel,wherein the first arc-shaped channel, the second arc-shaped channel andthe third arc-shaped channel are arranged in order along a directiontoward the center of the wafer chuck; guiding the fluid medium from thefirst arc-shaped channel to the second arc-shaped channel through afirst connection channel; and guiding the fluid medium from the secondarc-shaped channel to the third arc-shape channel through a secondconnection channel having a length less than a length of the firstconnection channel.
 15. The method as claimed in claim 11, wherein thefluid medium is guided by the first arc-shaped channel and the secondarc-shaped channel flowing in opposite circumferential directions aroundthe center of the wafer chuck.
 16. The method as claimed in claim 11,wherein the gaseous material supplied through the gas inlet port isguided to an inner annular groove formed on the top surface of the waferchuck, and the fluid medium is guided by the first arc-shaped channelthat is located underneath a vertical projection of the inner annulargroove.
 17. A wafer fabricating system, comprising: a wafer chuck havinga top surface, wherein a plurality of orifices are formed on the topsurface; a gas inlet port formed in the wafer chuck and locatedunderneath a fan-shaped sector of the top surface, wherein the gas inletport is fluidly communicated with the orifices; a fluid inlet portformed in the wafer chuck; a first arc-shaped channel and a secondarc-shaped channel fluidly communicated with the fluid inlet port,wherein the first arc-shaped channel and the second arc-shaped channelare located underneath the fan-shaped sector of the top surface andlocated at opposite sides of the gas inlet port; a gas source fluidlyconnected to the gas inlet port; and a fluid containing source fluidlyconnected to the fluid inlet port.
 18. The wafer fabricating system asclaimed in claim 17, wherein the arc-shape channels are concentricallyarranged relative to a center of the wafer chuck.
 19. The waferfabricating system as claimed in claim 17, wherein the arc-shapechannels have arc angles greater than 180 degrees relative to a centerof the wafer chuck.
 20. The wafer fabricating system as claimed in claim17, further comprising: a third arc-shaped channel, wherein the firstarc-shaped channel, the second arc-shaped channel and the thirdarc-shaped channel are arranged in order along a direction toward acenter of the wafer chuck; a first connection channel connecting thefirst arc-shaped channel to the second arc-shaped channel; and a secondconnection channel connecting the second arc-shaped channel to the thirdarc-shaped channel, wherein the second connection channel has a lengthless than a length of the first connection channel.